IXTP4N60PImage

IXTP4N60P


Manufacturer: IXYS

Description: MOSFET 4.0 Amps 600 V 1.9 Ohm Rds

Category: Transistors


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Product Category:MOSFET
Manufacturer:IXYS
RoHS:Details
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-220-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Id - Continuous Drain Current:4 A
Rds On - Drain-Source Resistance:2 Ohms
Vgs - Gate-Source Voltage:30 V
Vgs th - Gate-Source Threshold Voltage:5.5 V
Qg - Gate Charge:13 nC
Maximum Operating Temperature:+ 150 C
Packaging:Tube
Channel Mode:Enhancement
Brand:IXYS
Configuration:Single
Fall Time:20 ns
Forward Transconductance - Min:2.8 S
Height:16 mm
Length:10.66 mm
Minimum Operating Temperature:- 55 C
Pd - Power Dissipation:89 W
Rise Time:10 ns
Series:IXTP4N60
Factory Pack Quantity:50
Tradename:PolarHV
Transistor Type:1 N-Channel
Type:PolarHV Power MOSFET
Typical Turn-Off Delay Time:50 ns
Typical Turn-On Delay Time:25 ns
Width:4.83 mm
Unit Weight:0.081130 oz
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